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Phoenix Contact 1076860
AllPower ProductsPower supply
Phoenix ContactOfficial Distributor

By Phoenix Contact

SKU
Weight
3.424 kg
This product is Not Cancellable/Not Returnable
Series QUINT4-CAP

QUINT4-CAP/24DC/20/16KJ/PN - Module de capacité

Module de capacité QUINT, avec accumulateur d'énergie sans entretien à base de condensateurs à double couche, Montage sur rail DIN, entrée: 24 V DC, sortie : 24 V DC / 20 A / 16 kJ avec adaptateur universel pour profilé UTA 107 monté

  • Intégration facile dans les réseaux industriels par des interfaces au choix : USB, Modbus/RTU, PROFINET, EtherNet/IP™, Modbus/TCP et EtherCAT®
  • Longue durée de vie en service grâce aux condensateurs à double couche sans entretien
  • Démarrage efficace des charges lourdes avec une réserve de puissance statique
  • Signalisation complète : surveillance préventive du fonctionnement avec signalisation des états de fonctionnement critiques
  • Extension de la durée d'autonomie par le montage en parallèle de quatre appareils au maximum
Technical Specifications

Input data

Input Voltage24 V DC (SELV)
Input voltage range22.5 V DC ... 30 V DC
Fixed backup threshold< 22 V DC
Fixed backup threshold> 30 V DC
Current consumption IN (UN, IOUT = IN, Icharge = 0)20 A
Current consumption Imax (UN, IOUT = IStat.Boost, Icharge = max)30 A
Current consumption INo-Load(UN, IOUT = 0, Icharge = 0)0.1 A (No-load)
Current consumption Icharge (UN, IOUT = 0, Icharge = max)10 A (charging process)
Power consumption Pmax (UN, IOUT = IStat.Boost, Icharge = max)599 W
Power consumption PN (UN, IOUT = IN, Icharge = 0)488 W
Power consumption Pcharge (UN, IOUT = 0, Icharge = max)244 W
Buffer time4 min. (2.5 A)
Buffer time30 s (20 A)
Charging timeapprox. 6.3 min. (2.5 A)
Charging timeapprox. 2.1 min. (10 A)
Recharging timeapprox. 5.4 min. (2.5 A)
Recharging timeapprox. 1.4 min. (10 A)
Inrush Current≤ 7 A (≤ 4 ms)
Switch-on time1 ms (buffer mode)
Internal input fuseno
Dielectric strengthmax. 35 V DC (Reverse polarity protection)
Voltage drop, input/output0.5 V DC

Output data

Efficiency> 98 % (with charged energy storage device)
Connection in parallelyes
Connection in parallelmax. 4
Connection in seriesNo

Mains operation

Output Voltage24 V DC
Output current IN20 A
Static Boost (IStat.Boost)25 A
Output power POUT (UN, IOUT = IN)480 W
Output power POUT (UN, IOUT = Istat.Boost)600 W
Power dissipation No load (UN, IOut = 0, ICharge = 0)5 W
Power dissipation Nominal load (UN, IOut = IN, ICharge = 0)10 W
Short-circuit-proofyes (with input fuse)
Idling-proofyes

Battery operation

Output Voltage24 V DC
Output current IN20 A
Static Boost (IStat.Boost)25 A
Output power POUT (UN, IOUT = IN)480 W
Output power POUT (UN, IOUT = Istat.Boost)600 W
Power dissipation No load (UN, IOut = 0, ICharge = 0)5 W
Power dissipation Nominal load (UN, IOut = IN, ICharge = 0)90 W
Short-circuit-proofyes
Idling-proofyes

General

Capacity16 kJ
Storage mediumDouble-layer capacitor
Buffer time4 min. (2.5 A)
Buffer time30 s (20 A)

Input

Position1.x

Connection technology

Position marking1.1 (+), 1.2 (+), 1.3 (-), 1.4 (-)

Conductor connection

Connection MethodScrew connection
rigid0.2 mm² ... 6 mm²
flexible0.2 mm² ... 4 mm²
flexible with ferrule without plastic sleeve0.25 mm² ... 4 mm²
flexible with ferrule with plastic sleeve0.25 mm² ... 4 mm²
rigid (AWG)24 ... 10
Stripping length8 mm
Tightening torque0.5 Nm ... 0.6 Nm
Drive form screw headSlotted L

2-conductor connection

rigid0.2 mm² ... 1.5 mm²
flexible0.2 mm² ... 1.5 mm²
flexible with TWIN ferrule with plastic sleeve0.5 mm² ... 2.5 mm²

Output

Position2.x

Connection technology

Position marking2.1 (+), 2.2 (-)

Conductor connection

Connection MethodScrew connection
rigid0.2 mm² ... 6 mm²
flexible0.2 mm² ... 4 mm²
flexible with ferrule without plastic sleeve0.25 mm² ... 4 mm²
flexible with ferrule with plastic sleeve0.25 mm² ... 4 mm²
rigid (AWG)24 ... 10
Stripping length8 mm
Tightening torque0.5 Nm ... 0.6 Nm
Drive form screw headSlotted L

2-conductor connection

rigid0.2 mm² ... 1.5 mm²
flexible0.2 mm² ... 1.5 mm²
flexible with TWIN ferrule with plastic sleeve0.5 mm² ... 2.5 mm²

Signal

Position3.x

Connection technology

Position marking3.1 (13), 3.2 (14), 3.3 (Alarm), 3.4 (Ready), 3.5 (Remote), 3.6 (Parallel Port), 3.7 (SGnd)

Conductor connection

Connection MethodPush-in connection
rigid0.2 mm² ... 1 mm²
flexible0.2 mm² ... 1.5 mm²
flexible with ferrule without plastic sleeve0.2 mm² ... 1 mm²
flexible with ferrule with plastic sleeve0.2 mm² ... 0.75 mm²
rigid (AWG)24 ... 18
Stripping length8 mm

Interfaces

InterfacePROFINET
Number of interfaces2
Connection MethodRJ45
Position5.x
Supported protocolsPROFINET
LockingLocking clip
Transmission physicsTwisted-Pair
FeaturesAutonegotiation
FeaturesAutocrossing
FeaturesAutopolarity
FeaturesHalf- or full-duplex
TopologyStar
TopologyLine
Transmission Speed100 Mbps
Transmission lengthmax. 100 m
Cycle Time1 ms (RT)
Access time≤ 2 s
StandardsIEEE 802.3
StandardsIEC 61158
StandardsIEC 61784-2
ChipsetRenesas TPS-1
Electrical isolationyes

Signal state Remote

Connection labeling3.5
ChannelDI (digital input)
State (configurable)Remote
State conditionRemote
Low signalConnection to SGnd with < 3 kΩ
High signalOpen
Signal - state assignmentlow - active
Reference potential3.7 (SGnd, identical to1.3, 1.4, 2.2)

Signal state Parallel port

Connection labeling3.6
ChannelDI / DO (digital input / digital output)
Switching input descriptionConnection terminal block communication, parallel operation
State (configurable)Parallel Mode
State condition (configurable)Not active: noneActive:Output: buffer mode <1 VOutput: mains operation 24 V (UN-1 V (typical))Input: Connected with SGnd: start buffer mode
Switching voltage< 1 V
Switching voltage24 V (UN - 1 V (typical))
Current carrying capacity3 mA
Reference potentialDifferent device, parallel port IN/OUT

Signal state Alarm

Connection labeling3.3
ChannelDO (digital output)
Switching outputTransistor
State (configurable)Group alarm
State condition (configurable)Alarm threshold
Output Voltage25 V (UN - 1 V (typical))
Output can be loadedmax. 20 mA
State - signal assignmentactive - low
Reference potential3.7 (SGnd, identical to1.3, 1.4, 2.2)
LED status indicatorred (Alarm)

Signal state UIN OK

Connection labeling3.1, 3.2
ChannelDO (digital output)
Switching outputElectronic relays (OptoMOS)
State (configurable)UIn OK
State condition (configurable)UIn > 22,5 V DC, UIn < 30 V DC
Output Voltagemax. 30 V
Output can be loaded300 mA
State - signal assignmentactive - high
LED status indicatorgreen (UIn OK)

Signal state Ready

Connection labeling3.4
ChannelDO (digital output)
Switching outputTransistor
State (configurable)Ready
State condition (configurable)State of charge = 100% or buffer mode
Output Voltage25 V (UN - 1 V (typical))
Output can be loadedmax. 20 mA
State - signal assignmentactive - high
Reference potential3.7 (SGnd, identical to1.3, 1.4, 2.2)
LED status indicatorGreen (state of charge - SOC)

Signal ground SGnd

Connection labeling3.7
Switching voltage0 V
Current carrying capacitymax. 60 mA
FunctionSignal ground
Reference potential3.3 Alarm, 3.4 Ready, 3.5 Remote

Electrical properties

Insulation voltage input, output / housing500 V

Product properties

Product familyQUINT capacity module
MTBF (IEC 61709, SN 29500)1351036 h (25 °C)
MTBF (IEC 61709, SN 29500)903325 h (40 °C)
MTBF (IEC 61709, SN 29500)470143 h (60 °C)

Insulation characteristics

Protection classIII (Special application (SELV))
Overvoltage categoryII
Degree of pollution2

Item dimensions

Width244 mm
Height130 mm
Depth125 mm

Installation dimensions

Installation distance right/left0 mm / 0 mm
Installation distance top/bottom50 mm / 50 mm

Mounting

Mounting TypeDIN rail mounting
Mounting Positionhorizontal DIN rail NS 35, EN 60715

Material specifications

Flammability rating according to UL 94 (housing / terminal blocks)V0
Housing MaterialMetal

Ambient conditions

Degree of ProtectionIP20
Ambient Temperature (Operation)-25 °C ... 60 °C (> 40 °C Derating: 1 %/K)
Ambient temperature (storage/transport)-40 °C ... 60 °C
Ambient temperature (start-up type tested)-40 °C
Maximum altitude≤ 4000 m
Climatic class3K3 (in acc. with EN 60721)
Max. permissible relative humidity (operation)≤ 95 %
Shock30g, 18 ms per spatial direction (in accordance with IEC 60068-2-27)
Vibration (Operation)0,7g

Overvoltage category

EN 61010-1II (≤ 4000 m)
EN 61010-2-201II (≤ 4000 m)
UL 60950-1II (≤ 4000 m)

Protective extra-low voltage

Standard designationProtective extra-low voltage
Standards/specificationsIEC 61010-1 (SELV)
Standards/specificationsIEC 61010-2-201 (PELV)

UL

IdentificationUL 61010-1
IdentificationUL 61010-2-201
IdentificationUL 121201
IdentificationCAN/CSA-C22.2 No. 61010-1-12
IdentificationCAN/CSA C22.2 No. 61010-2-201:14
IdentificationCSA C22.2 No. 213-17 Class I, Devsion 2, Groups A, B, C, D (Hazardous Location)

CB scheme

IdentificationIEC 61010-1
IdentificationIEC 61010-2-201
IdentificationEN 61010-1
IdentificationEN 61010-2-201

EMC data

Interference emissionNoise emission in accordance with EN 61000-6-3 and EN 61000-6-4
Noise immunityDevice immunity in accordance with EN 61000-6-2
Electromagnetic compatibilityConformance with EMC Directive 2014/30/EU

Electrostatic discharge

Standards/regulationsEN 61000-4-2
Contact discharge4 kV (Test Level 2)
Discharge in air8 kV (Test Level 3)
CommentsCriterion B

Electromagnetic HF field

Standards/regulationsEN 61000-4-3
Frequency Range80 MHz ... 1 GHz
Test field strength10 V/m
CommentsCriterion A

Fast transients (burst)

Standards/regulationsEN 61000-4-4
Input2 kV (Test Level 3 - asymmetrical)
Output2 kV (Test Level 3 - asymmetrical)
Signal2 kV (Test Level 3 - asymmetrical)
CommentsCriterion B

Surge voltage load (surge)

Standards/regulationsEN 61000-4-5
Signal1 kV (Test Level 2 - asymmetrical)
CommentsCriterion B
Input/Output1 kV (Test Level 2 - symmetrical)
Input/Output2 kV (Test Level 3 - asymmetrical)

Conducted interference

Standards/regulationsEN 61000-4-6
Frequency Range0.15 MHz ... 80 MHz
CommentsCriterion A
Voltage10 V

Criteria

Criterion ANormal operating behavior within the specified limits.
Criterion BTemporary impairment to operational behavior that is corrected by the device itself.

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